Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRLR3636TRLPBF, N-Channel MOSFET, 60 V Vdss, 50 A continuous drain, 6.8 mOhm Rds(on) at 10 V, D-Pak (TO-252-3), -55°C to 175°C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 50A (Tc) |
| Power dissipation | 143W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 6.8mOhm @ 50A, 10V |
| Gate charge (Qg) (Max) @ vgs | 49 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3779 pF @ 50 V |
The Infineon IRLR3636TRLPBF is a 60 V, 50 A N-channel HEXFET MOSFET in a D-Pak (TO-252-3) surface-mount package.
The specified Rds(on) of 6.8 mOhm is measured at Vgs = 10 V, but the part also carries a drive-voltage spec at 4.5 V.
Total gate charge Qg is 49 nC at 4.5 V. Input capacitance Ciss is 3779 pF at 50 V Vds.
The part is ROHS3 compliant.
