100 V logic-level HEXFET in a DPAK footprint
Gate drive and switching behaviour
This MOSFET is characterised for gate drive voltages of 4 V and 10 V, with the 10 V drive delivering the rated Rds(on). The maximum gate threshold voltage is 2 V at 250 µA drain current, so a 3.3 V logic output from a microcontroller or gate-driver IC will reliably turn the device on — but the on-resistance will be higher than the 105 mOhm spec because the Rds(on) is quoted at 10 V. Total gate charge is 34 nC at 5 V gate-source; driving this gate at 100 kHz draws roughly 3.4 mA from the driver, well within the capability of a standard MOSFET driver. Input capacitance is 800 pF at 25 V drain-source, which sets the switching energy per cycle in a hard-switched topology.
No official second-source cross-reference is published in the Infineon documentation, but the HEXFET series has broad pin-compatible equivalents from other manufacturers — verify the gate charge and threshold voltage against your driver circuit before substituting.