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Infineon Technologies IRLR3410TRLPBF

IRLR3410TRLPBF HEXFET N-Ch MOSFET, 100V 17A D-Pak

MPNIRLR3410TRLPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRLR3410TRLPBF, 100 Vdss, 17 A Id, 105 mOhm Rds(on) at 10 V, D-Pak (TO-252) surface mount, -55°C to 175°C.

$1.06Ref. price · indicative, final on quote
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLR3410TRLPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation79W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs105mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs34 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds800 pF @ 25 V

Product details

100 V, 17 A N-channel — the switching envelope

Maximum on-resistance is 105 mOhm at 10 A gate drive of 10 V — the Rds(on) floor for conduction-loss calculations in a switching regulator or load switch. Gate charge totals 34 nC at 5 V, and input capacitance is 800 pF at 25 V drain bias. That keeps the drive current modest — a 34 nC gate switched at 100 kHz draws about 3.4 mA from the gate driver, well within a standard totem-pole driver's capability.

Package and mounting

Housed in a TO-252-3 D-Pak (2 leads plus tab), this is a surface-mount power package with an exposed drain tab. The tab is the primary thermal path — the board copper area under it sets the junction-to-ambient thermal resistance. On a standard 1 oz copper pad with adequate via stitching, the 79 W maximum dissipation at case temperature is achievable; without the copper plane, derate aggressively. The D-Pak is hand-solderable with a standard iron if the tab gets a preheat bump — no hot-air station required for a field swap. Orientation is obvious: the tab is drain, gate is pin 1 (left when the tab faces away), source is pin 2. Marking on the package body is legible under magnification.

Lifecycle and compliance — active, ROHS3, no LTB

No official successor or second-source cross-reference is listed in the manufacturer documentation.

The 175°C ceiling gives headroom for transient overloads without immediate derating to a lower-temperature device.

Frequently asked questions

What is the replacement for IRLR3410TRLPBF?

No official replacement or second-source part number is published by the manufacturer for the IRLR3410TRLPBF. The peer IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET but operates at 500 V / 4.3 A with a 950 mOhm Rds(on) — it is not a functional substitute for the 100 V / 17 A / 105 mOhm IRLR3410TRLPBF. For a drop-in alternative, cross-reference the package (D-Pak), Vdss (100 V), and Rds(on) against other HEXFET or equivalent N-channel parts in the same TO-252 footprint.