IRLR3114ZTRPBF

Infineon Technologies · HEXFET® Series

Infineon Technologies HEXFET series, N-Channel MOSFET, 40 V Vdss, 42 A Id, 4.9 mOhm Rds(on), D-Pak (TO-252-3) surface-mount package, -55°C to 175°C junction temperature.

Infineon Technologies IRLR3114ZTRPBF
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[IN STOCK] In Stock: 813 pcs
$1.32/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR3114ZTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 100µA
Rds on (Max) @ id, vgs4.9mOhm @ 42A, 10V
Gate charge (Qg) (Max) @ vgs56 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3810 pF @ 25 V

Technical details

40 V, 42 A low-loss switch in a D-Pak footprint

The IRLR3114ZTRPBF is an Infineon HEXFET N-channel power MOSFET rated for 40 V drain-to-source and 42 A continuous drain current at the case. The 4.9 mOhm max on-resistance at 42 A, 10 V gate drive keeps conduction loss under 8.6 W at full rated current — the 140 W dissipation ceiling at the case gives substantial thermal headroom for a 42 A load in a switching regulator or motor-drive output stage. The D-Pak (TO-252-3) surface-mount package with a single tab is the limiting thermal path — the junction-to-case figure governs the real current capability once the board copper area and airflow are factored in.

IRLR3114ZTRPBF
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