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Infineon Technologies IRLR3110ZTRPBF
Infineon Technologies

IRLR3110ZTRPBF N-Channel MOSFET, 100 V, 42 A, DPak

MPNIRLR3110ZTRPBF
End of Life

Infineon HEXFET series, IRLR3110ZTRPBF, N-Channel MOSFET, 100 Vdss, 42 A Id, 14 mOhm Rds(on) at 10 V, DPak (TO-252) surface mount, -55 to 175 °C.

$1.9Ref. price · indicative, final on quote
IRLR3110ZTRPBF datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLR3110ZTRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 100µA
Rds on (Max) @ id, vgs14mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs48 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3980 pF @ 25 V

Product details

Gate drive and switching budget

The 3980 pF input capacitance at 25 V drain-source sets the switching speed ceiling; the gate-drive source impedance and the PCB trace inductance become the limiting factors above 200 kHz.

Temperature range and thermal management

The 140 W power dissipation at case temperature assumes the DPak tab is soldered to a PCB copper area sized to keep the junction below 175 °C at the operating current; a 1-inch-square 2-oz copper pad on a two-layer board is a typical starting point for 20 A continuous loads.

Lifecycle and compliance

No last-time-buy risk or successor has been announced.

Frequently asked questions

What is the Rds(on) of IRLR3110ZTRPBF?

The part is also specified for 4.5 V gate drive, allowing logic-level switching.

What is the recommended replacement for IRLR3110ZTRPBF?

No official successor has been announced. The IPD50R950CEAUMA1 is a 500 V CoolMOS part with a different voltage class and Rds(on) tier, not a functional second-source for this 100 V HEXFET.