Infineon Technologies · HEXFET® Series
Infineon HEXFET series, IRLR3110ZTRPBF, N-Channel MOSFET, 100 Vdss, 42 A Id, 14 mOhm Rds(on) at 10 V, DPak (TO-252) surface mount, -55 to 175 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 42A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2.5V @ 100µA |
| Rds on (Max) @ id, vgs | 14mOhm @ 38A, 10V |
| Gate charge (Qg) (Max) @ vgs | 48 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 3980 pF @ 25 V |
The 140 W power dissipation at case temperature assumes the DPak tab is soldered to a PCB copper area sized to keep the junction below 175 °C at the operating current; a 1-inch-square 2-oz copper pad on a two-layer board is a typical starting point for 20 A continuous loads.
No last-time-buy risk or successor has been announced.
