100 V, 14 mOhm — the switching-loss and conduction-loss trade-off
The IRLR3110ZTRLPBF is an Infineon HEXFET N-channel MOSFET rated for 100 V drain-source and 42 A continuous drain at 25°C case temperature. Above that, a dedicated gate driver with a 10 V rail pulls the Rds(on) down to the rated minimum.
175°C junction — where the thermal budget lands
Operating junction temperature spans -55°C to 175°C, wider than the typical 150°C ceiling on many automotive-grade MOSFETs. That extra 25°C headroom matters in under-hood or sealed-enclosure designs where ambient air hits 105°C and the case-to-ambient thermal resistance is limited by the PCB copper area. Power dissipation is rated at 140 W at case temperature 25°C — the practical limit in a DPAK on a standard FR-4 board with 1 oz copper is closer to 2-3 W continuous before the junction hits 175°C. The 3980 pF input capacitance at 25 V drain-source sets the switching loss component; a 100 kHz hard-switched converter needs a gate drive capable of sourcing and sinking that Ciss charge quickly.
DPAK footprint and supply-chain fit
No re-spin needed if you have a DPAK land pattern on the board. ROHS3 compliant.