IRLR3110ZTRLPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-Channel MOSFET, IRLR3110ZTRLPBF, 100 V drain-source, 42 A continuous drain, 14 mOhm Rds(on) at 10 V, DPAK (TO-252) surface mount, -55°C to 175°C junction temperature.

Infineon Technologies IRLR3110ZTRLPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR3110ZTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2.5V @ 100µA
Rds on (Max) @ id, vgs14mOhm @ 38A, 10V
Gate charge (Qg) (Max) @ vgs48 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds3980 pF @ 25 V

Technical details

100 V, 14 mOhm — the switching-loss and conduction-loss trade-off

The IRLR3110ZTRLPBF is an Infineon HEXFET N-channel MOSFET rated for 100 V drain-source and 42 A continuous drain at 25°C case temperature. Above that, a dedicated gate driver with a 10 V rail pulls the Rds(on) down to the rated minimum.

175°C junction — where the thermal budget lands

That extra 25°C headroom matters in under-hood or sealed-enclosure designs where ambient air hits 105°C and the case-to-ambient thermal resistance is limited by the PCB copper area. Power dissipation is rated at 140 W at case temperature 25°C — the practical limit in a DPAK on a standard FR-4 board with 1 oz copper is closer to 2-3 W continuous before the junction hits 175°C.

DPAK footprint and supply-chain fit

No re-spin needed if you have a DPAK land pattern on the board. ROHS3 compliant.

IRLR3110ZTRLPBF
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