Infineon HEXFET® N-channel MOSFET, IRLR3105TRPBF, 55 V Vdss, 25 A continuous drain, 37 mOhm Rds(on) max at 10 V, DPAK (TO-252) surface mount, -55 to 175 °C.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 5V, 10V |
| Current - continuous drain (Id) @ 25°C | 25A (Tc) |
| Power dissipation | 57W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 3V @ 250µA |
| Rds on (Max) @ id, vgs | 37mOhm @ 15A, 10V |
| Gate charge (Qg) (Max) @ vgs | 20 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 710 pF @ 25 V |
Gate charge is 20 nC at 5 V, so a 5 V logic-level gate drive can switch it efficiently; the 710 pF input capacitance at 25 V drain-source keeps the Miller plateau short.
The 57 W maximum power dissipation at case temperature assumes an infinite heatsink; in practice the DPAK tab soldered to a 1 oz copper pad on a 4-layer board handles 2-3 W continuous before hitting 100 °C rise.
Yes — it is ROHS3 compliant.