IRLR2905ZTRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-Channel MOSFET, IRLR2905ZTRPBF, 55 V Vdss, 42 A continuous drain, 13.5 mOhm Rds(on) at 10 V, 35 nC gate charge, DPAK surface-mount, -55°C to 175°C.

Infineon Technologies IRLR2905ZTRPBF
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[IN STOCK] In Stock: 827 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR2905ZTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C42A (Tc)
Power dissipation110W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs13.5mOhm @ 36A, 10V
Gate charge (Qg) (Max) @ vgs35 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1570 pF @ 25 V

Technical details

IRLR2905ZTRPBF
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