IRLR2905TRPBF, HEXFET® series, N-Channel MOSFET, 55 V Vdss, 42 A Id, 27 mOhm Rds(on) max at 10 V, D-Pak (TO-252) surface mount, -55°C to 175°C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 42A (Tc) |
| Power dissipation | 110W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 27mOhm @ 25A, 10V |
| Gate charge (Qg) (Max) @ vgs | 48 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 1700 pF @ 25 V |
Total gate charge is 48 nC at 5 V. Input capacitance is 1700 pF at 25 V drain-source.
In a D-Pak, the thermal path runs through the exposed tab to the PCB copper; a 1-inch-square copper pad on a 2-oz board gives roughly 50°C/W junction-to-ambient. Plan the copper area for your actual load current and ambient temperature.
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