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Infineon Technologies IRLR2705TRPBF

IRLR2705TRPBF N-Channel MOSFET, 55V 28A DPAK, 40 mOhm

MPNIRLR2705TRPBF
End of Life

Infineon HEXFET® series, IRLR2705TRPBF, N-Channel MOSFET, 55 V Vdss, 28 A Id, 40 mOhm Rds(on) @ 17 A 10 V, D-Pak (TO-252-3) surface mount, -55°C to 175°C.

$0.78Ref. price · indicative, final on quote
Infineon Technologies IRLR2705TRPBF datasheet (PDF)
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLR2705TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C28A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 25 V

Product details

At 17 A, the 40 mOhm Rds(on) produces about 11.6 W of conduction loss at 25°C junction. The D-Pak (TO-252-3) with exposed tab can dissipate 68 W at case temperature, so the margin is comfortable for continuous duty if the PCB copper area is adequate. The gate-drive voltage for rated Rds(on) is 10 V, but the part is characterised down to 4 V drive — useful if the gate driver rail is 5 V.

Total gate charge is 25 nC at 5 V gate-source. Input capacitance is 880 pF at 25 V drain-source, which keeps the Miller plateau narrow and the switching losses moderate.

The D-Pak surface-mount package suits automated assembly and reflow soldering.

It is ROHS3 compliant, with no exemptions that would restrict EU or global BOM acceptance.

Frequently asked questions

What is the equivalent MOSFET to IRLR2705TRPBF?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET but it is a 500 V, 4.3 A device with 950 mOhm Rds(on) — a different voltage and current class entirely. It is not a functional equivalent for a 55 V, 28 A application.