IRLR2705TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® series, IRLR2705TRPBF, N-Channel MOSFET, 55 V Vdss, 28 A Id, 40 mOhm Rds(on) @ 17 A 10 V, D-Pak (TO-252-3) surface mount, -55°C to 175°C.

Infineon Technologies IRLR2705TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR2705TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C28A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 25 V

Technical details

At 17 A, the 40 mOhm Rds(on) produces about 11.6 W of conduction loss at 25°C junction. The D-Pak (TO-252-3) with exposed tab can dissipate 68 W at case temperature, so the margin is comfortable for continuous duty if the PCB copper area is adequate. The gate-drive voltage for rated Rds(on) is 10 V, but the part is characterised down to 4 V drive — useful if the gate driver rail is 5 V.

Total gate charge is 25 nC at 5 V gate-source. Input capacitance is 880 pF at 25 V drain-source, which keeps the Miller plateau narrow and the switching losses moderate.

The D-Pak surface-mount package suits automated assembly and reflow soldering.

It is ROHS3 compliant, with no exemptions that would restrict EU or global BOM acceptance.

IRLR2705TRPBF
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