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Infineon Technologies IRLR2705TRPBF
Infineon Technologies

IRLR2705TRPBF N-Channel MOSFET, 55V 28A DPAK, 40 mOhm

MPNIRLR2705TRPBF
End of Life

Infineon HEXFET® series, IRLR2705TRPBF, N-Channel MOSFET, 55 V Vdss, 28 A Id, 40 mOhm Rds(on) @ 17 A 10 V, D-Pak (TO-252-3) surface mount, -55°C to 175°C.

$0.78Ref. price · indicative, final on quote
IRLR2705TRPBF datasheet
PackagingTO-252-3, DPak (2 Leads + Tab), SC-63
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLR2705TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C28A (Tc)
Power dissipation68W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs40mOhm @ 17A, 10V
Gate charge (Qg) (Max) @ vgs25 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds880 pF @ 25 V

Product details

At 17 A, the 40 mOhm Rds(on) produces about 11.6 W of conduction loss at 25°C junction. The D-Pak (TO-252-3) with exposed tab can dissipate 68 W at case temperature, so the margin is comfortable for continuous duty if the PCB copper area is adequate. The gate-drive voltage for rated Rds(on) is 10 V, but the part is characterised down to 4 V drive — useful if the gate driver rail is 5 V.

Gate charge and switching speed

Total gate charge is 25 nC at 5 V gate-source. For a 100 kHz switching frequency, the average gate-drive current is 2.5 mA — easily met by a standard gate driver. Input capacitance is 880 pF at 25 V drain-source, which keeps the Miller plateau narrow and the switching losses moderate.

Temperature range and environment

The D-Pak surface-mount package suits automated assembly and reflow soldering.

Lifecycle and compliance

It is ROHS3 compliant, with no exemptions that would restrict EU or global BOM acceptance.

Frequently asked questions

What is the equivalent MOSFET to IRLR2705TRPBF?

The IPD50R950CEAUMA1 is a CoolMOS CE N-channel MOSFET but it is a 500 V, 4.3 A device with 950 mOhm Rds(on) — a different voltage and current class entirely. It is not a functional equivalent for a 55 V, 28 A application.