IRLR2705TRLPBF
Infineon Technologies · HEXFET® Series
MOSFET N-CH 55V 28A DPAK
[IN STOCK] In Stock: 1 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 28A (Tc) |
| Power dissipation | 68W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-252-3, DPak (2 Leads + Tab), SC-63 |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 17A, 10V |
| Gate charge (Qg) (Max) @ vgs | 25 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 880 pF @ 25 V |
IRLR2705TRLPBF
[ALLOC] verified