HEXFET N-channel in DPAK — 30 V, 23 A, 45 mOhm
The Infineon IRLR2703TRPBF is an N-channel enhancement-mode MOSFET from the HEXFET® series, housed in a surface-mount DPAK (TO-252-3) package. This part targets low-voltage power switching — 12 V and 24 V rails — where the 30 V Vdss provides adequate headroom. The DPAK footprint with an exposed tab allows the PCB copper to pull heat away; the 45 W power dissipation ceiling (at Tc=25°C) sets the thermal budget for continuous conduction.
Gate drive and switching profile
Gate charge totals 15 nC at 4.5 V, which means a 5 V logic-level output or a low-current gate driver can switch the FET without a dedicated boost stage. The input capacitance (Ciss) is 450 pF at 25 V drain-source — light enough that the gate driver's peak current is rarely the limiting factor in the switching loop. The drive voltage range (4 V to 10 V for rated Rds(on)) matches 5 V microcontroller outputs directly. At 4 V gate drive the on-resistance rises slightly from the 45 mOhm figure at 10 V, but the part is specified to deliver the full 23 A drain current with the lower drive voltage.
Thermal and environmental range
This makes the IRLR2703TRPBF suitable for under-hood automotive compartments, high-ambient enclosures, or any design where the junction may spike above 150°C during fault conditions.