100 V N-channel HEXFET in a rework-friendly DPAK
The Infineon IRLR120NTRPBF is a 100 V, 10 A N-channel power MOSFET from the HEXFET series, built on a standard metal-oxide trench process. The DPAK (TO-252) package is a surface-mount tabbed outline — the exposed drain tab solders to the board copper for heat spreading, and the three-lead body reworks cleanly under hot air if you preheat the board to 100°C.
Rds(on) is specified at 185 mOhm maximum with 10 V on the gate and 6 A drain current. The 2 V maximum threshold at 250 µA means the device starts conducting early, but full enhancement requires the higher drive voltage to minimise conduction loss. Gate charge is 20 nC at 5 V — a modest figure that keeps switching losses low in the 10–50 kHz range. The 440 pF input capacitance at 25 V drain bias gives the driver a clear capacitive load to push; a 1 A gate driver charges the gate in about 20 ns, so rise-time-limited switching above 100 kHz is not the target application for this part.
Temperature range and thermal budget
The 48 W maximum power dissipation at the case is a theoretical ceiling; real-world dissipation is set by the PCB copper area under the tab and the airflow across the board.
Sourcing and lifecycle posture
It is ROHS3 compliant and available through independent distribution.