100 V N-channel HEXFET in a rework-friendly DPAK
Rds(on) is specified at 185 mOhm maximum with 10 V on the gate and 6 A drain current. The 2 V maximum threshold at 250 µA means the device starts conducting early, but full enhancement requires the higher drive voltage to minimise conduction loss. Gate charge is 20 nC at 5 V — a modest figure that keeps switching losses low in the 10–50 kHz range. The 440 pF input capacitance at 25 V drain bias gives the driver a clear capacitive load to push; a 1 A gate driver charges the gate in about 20 ns, so rise-time-limited switching above 100 kHz is not the target application for this part.
It is ROHS3 compliant and available through independent distribution.