IRLR120NTRLPBF

Infineon Technologies · HEXFET® Series

IRLR120NTRLPBF, HEXFET® Series, N-Channel MOSFET, 100 V Vdss, 10 A Id, 185 mOhm Rds(on) @ 6A 10V, DPAK (TO-252), Surface Mount, -55°C to 175°C.

Infineon Technologies IRLR120NTRLPBF
Download datasheet (PDF)
[IN STOCK] In Stock: 3 pcs
$3.19/ pc

Volume pricing

Buy Now

MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR120NTRLPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C10A (Tc)
Power dissipation48W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs185mOhm @ 6A, 10V
Gate charge (Qg) (Max) @ vgs20 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds440 pF @ 25 V

Technical details

The 48 W package dissipation limit at case temperature gives thermal headroom for switching frequencies where switching losses stay low.

Gate charge and input capacitance — switching speed budget

Gate charge is 20 nC at 5 V gate drive, and input capacitance is 440 pF at 25 V drain-source. These numbers are moderate — the part switches cleanly in the tens to low hundreds of kHz range without excessive gate-drive power. The ±16 V maximum gate-source voltage allows robust gate drive without worrying about oxide breakdown.

The DPAK package is widely used and stocked across distribution.

IRLR120NTRLPBF
[ALLOC] verified
Quote