100 V N-channel HEXFET® in DPAK — what it is and where it fits
The IRLR120NTRLPBF is an N-channel power MOSFET from the HEXFET® series, rated for 100 V drain-source voltage and 10 A continuous drain current at 25 °C case temperature.
185 mOhm on-resistance — what it means for your BOM
The maximum on-resistance of 185 mOhm at 6 A drain current with 10 V gate drive sets the conduction loss floor. The 48 W package dissipation limit at case temperature gives thermal headroom for switching frequencies where switching losses stay low.
Gate charge and input capacitance — switching speed budget
Gate charge is 20 nC at 5 V gate drive, and input capacitance is 440 pF at 25 V drain-source. These numbers are moderate — the part switches cleanly in the tens to low hundreds of kHz range without excessive gate-drive power. The ±16 V maximum gate-source voltage allows robust gate drive without worrying about oxide breakdown.
Lifecycle and compliance — no surprises
It is ROHS3 compliant, so it meets current EU and RoHS-restricted market requirements without exemption paperwork. The DPAK package is widely used and stocked across distribution.