IRLR024NTRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRLR024NTRPBF, N-Channel MOSFET, 55 V Vdss, 17 A Id, 65 mOhm Rds(on) at 10 V, D-Pak (TO-252), Surface Mount, -55°C to 175°C.

Infineon Technologies IRLR024NTRPBF
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[IN STOCK] In Stock: 14,997 pcs
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLR024NTRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4V, 10V
Current - continuous drain (Id) @ 25°C17A (Tc)
Power dissipation45W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-252-3, DPak (2 Leads + Tab), SC-63
Vgs(th) (Max) @ id2V @ 250µA
Rds on (Max) @ id, vgs65mOhm @ 10A, 10V
Gate charge (Qg) (Max) @ vgs15 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds480 pF @ 25 V

Technical details

IRLR024NTRPBF
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