40 V, 1.7 mOhm — the conduction-loss floor for high-current switching
The headline figure is the 1.7 mOhm maximum on-resistance at Vgs = 10 V and Id = 195 A — this sets the conduction-loss floor in a synchronous rectifier, motor-drive H-bridge, or battery-isolation switch.
Gate charge and drive voltage — what 162 nC at 4.5 V means for the driver
Total gate charge is 162 nC at Vgs = 4.5 V. For a 100 kHz switching frequency, the average gate-drive current is 162 nC × 100 kHz = 16.2 mA — well within a standard gate-driver IC's capability. The 10 315 pF input capacitance at Vds = 25 V means the driver must supply the peak current to charge Ciss during the Miller plateau; a 2 A gate-driver will switch the IRLP3034PBF in under 100 ns.
Active production, ROHS3 — no LTB risk for the BOM line
The through-hole TO-247AC package is a standard footprint across the HEXFET family, making it straightforward to dual-source with other TO-247 N-channel parts from Infineon or competitors if the BOM requires a second qualified source.