IRLMS6802TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET series, IRLMS6802TRPBF, P-Channel MOSFET, 20 V Vdss, 5.6 A Id, 50 mOhm Rds(on) at 4.5 V, SOT-23-6 package, -55°C to 150°C.

Infineon Technologies IRLMS6802TRPBF
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[IN STOCK] In Stock: 503 pcs
$0.64/ pc

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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLMS6802TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C5.6A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs50mOhm @ 5.1A, 4.5V
Gate charge (Qg) (Max) @ vgs16 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1079 pF @ 10 V

Technical details

Logic-level P-channel for low-voltage rail switching

The IRLMS6802TRPBF is a P-channel MOSFET from Infineon's HEXFET series designed for low-voltage, logic-level gate drive applications. This part sits in a SOT-23-6 (Micro6/TSOP-6) surface-mount package, so the board area is tight — the 2 W power dissipation ceiling at 25 °C ambient means the copper pour on the drain pins is your heatsink.

The gate charge is 16 nC at 5 V, so a standard MCU pin can drive it at moderate PWM frequencies without an external driver. Input capacitance is 1079 pF at 10 V Vds.

Temperature range and thermal reality

The 2 W max power dissipation at 25 °C ambient (Ta) drops with temperature; the SOT-23-6 package relies on the PCB copper area to pull heat from the drain. A 1 oz copper pour of at least 25 mm² under the drain pins keeps the die temperature in check at continuous currents above 3 A.

IRLMS6802TRPBF
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