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Infineon Technologies IRLMS2002TRPBF

IRLMS2002TRPBF HEXFET N-Ch MOSFET, 20V 6.5A SOT-23-6

MPNIRLMS2002TRPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRLMS2002TRPBF, 20V Vdss, 6.5A continuous drain, 30 mOhm Rds(on) at 4.5V, SOT-23-6 (Micro6) package, -55°C to 150°C operating temperature.

$0.83Ref. price · indicative, final on quote
PackagingSOT-23-6
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRLMS2002TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C6.5A (Ta)
Power dissipation2W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1.2V @ 250µA
Rds on (Max) @ id, vgs30mOhm @ 6.5A, 4.5V
Gate charge (Qg) (Max) @ vgs22 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds1310 pF @ 15 V

Product details

Low-voltage switching workhorse in a SOT-23-6 footprint

It is a logic-level device — the 30 mOhm max on-resistance is specified at just 4.5 V gate drive, and it still turns on hard with 2.5 V at the gate.

At 4.5 V gate drive the max Rds(on) is 30 mOhm with 6.5 A drain current — that is a conduction loss of about 1.3 W at full load, which the 2 W package power dissipation can just handle with good board copper. The total gate charge is 22 nC at 5 V; switching at 100 kHz the gate driver needs to source and sink roughly 2.2 mA average, well within a standard MOSFET driver's capability. Input capacitance is 1310 pF at 15 V Vds, so the switching edges are clean enough for most 100–500 kHz converters without excessive cross-conduction.

Package and thermal reality

The SOT-23-6 (Micro6) package keeps the board footprint small — about 3 mm × 3 mm — but the 2 W power dissipation rating assumes the copper pad on the PCB acts as the heatsink. For continuous loads above 3 A, a 1-inch-square copper pour on the drain pad is the difference between a 125 °C junction and a 150 °C one. The operating junction range is -55 °C to 150 °C, so it handles industrial ambient temperatures without derating the current as long as the board copper is adequate.

Frequently asked questions

What is the Rds(on) of IRLMS2002TRPBF at 4.5V?

The maximum on-resistance is 30 mOhm at 4.5 V gate drive with 6.5 A drain current.

Is IRLMS2002TRPBF RoHS compliant?

Yes, it is ROHS3 compliant per the lifecycle record.