IRLMS1503TRPBF

Infineon Technologies · HEXFET® Series

MOSFET N-CH 30V 3.2A MICRO6

Infineon Technologies IRLMS1503TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLMS1503TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.2A (Ta)
Power dissipation1.7W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseSOT-23-6
Vgs(th) (Max) @ id1V @ 250µA
Rds on (Max) @ id, vgs100mOhm @ 2.2A, 10V
Gate charge (Qg) (Max) @ vgs9.6 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds210 pF @ 25 V
IRLMS1503TRPBF
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