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Infineon Technologies IRLML9303TRPBF

IRLML9303TRPBF P-Channel MOSFET 30V 2.3A SOT-23

MPNIRLML9303TRPBF
End of Life

Infineon HEXFET® P-Channel MOSFET, IRLML9303TRPBF, 30 V Vdss, 2.3 A Id, 165 mOhm Rds(on) at 10 V, SOT-23 package, -55°C to 150°C operating temperature.

$0.47Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRLML9303TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeP-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.3A (Ta)
Power dissipation1.25W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.4V @ 10µA
Rds on (Max) @ id, vgs165mOhm @ 2.3A, 10V
Gate charge (Qg) (Max) @ vgs2 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds160 pF @ 25 V

Product details

P-channel load switch in a SOT-23 footprint

Packaged in a SOT-23 (Micro3) surface-mount case, it is a common choice for high-side load switching in battery-powered and low-voltage systems where a P-channel simplifies the gate drive — no charge pump needed. The 165 mOhm maximum on-resistance at 10 Vgs keeps conduction losses manageable for loads up to a couple of amps, and the ±20 V gate-source rating gives headroom for 12 V or 15 V gate drives.

Gate drive and switching parasitics

Gate charge is 2 nC typical at 4.5 Vgs, meaning a modest GPIO pin or a small driver can switch it quickly without a pre-driver. Input capacitance Ciss is 160 pF at 25 Vds, which keeps the switching losses low in moderate-frequency converters or load switches. The threshold voltage is specified at 2.4 V maximum at 10 µA drain current, so a 3.3 V logic signal can turn it on fully — though the 165 mOhm Rds(on) figure is guaranteed at 4.5 Vgs and 10 Vgs, not at the threshold edge.

Thermal budget in a small package

The SOT-23 package limits maximum power dissipation to 1.25 W at 25°C ambient. For a 2.3 A load with 165 mOhm Rds(on), the conduction loss is about 0.87 W — that leaves only about 0.38 W of margin before hitting the thermal ceiling. In practice, derating above 25°C is necessary; a 1 A load is a safer fit for continuous operation without exceeding the junction temperature rating of 150°C.

Lifecycle and supply posture

It is ROHS3 compliant. No official replacement or second-source part is listed in the manufacturer's cross-reference.

Frequently asked questions

Can IRLML9303TRPBF be driven directly from a 3.3 V logic signal?

Yes. The maximum gate threshold voltage is 2.4 V at 10 µA drain current, so a 3.3 V logic signal is sufficient to turn the MOSFET on. However, the guaranteed on-resistance of 165 mOhm is specified at both 4.5 Vgs and 10 Vgs — at 3.3 Vgs the Rds(on) will be higher; check the typical transfer curve in the datasheet to estimate the actual value at your gate drive voltage.