IRLML9301TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRLML9301TRPBF, P-Channel MOSFET, 30V Vdss, 3.6A Id, 64mOhm Rds(on) @ 3.6A, 10V, SOT-23-3 package, -55°C to 150°C.

Infineon Technologies IRLML9301TRPBF
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLML9301TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.6A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.4V @ 10µA
Rds on (Max) @ id, vgs64mOhm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs4.8 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds388 pF @ 25 V

Technical details

30 V P-Channel load switch in a SOT-23

The 4.8 nC gate charge at 4.5 V means a 3.3 V logic gate driver can switch it at moderate frequency without excessive drive current — useful in portable and battery-powered designs.

Active production, SOT-23 package, RoHS3 compliant

IRLML9301TRPBF
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