Infineon Technologies · HEXFET® Series
IRLML6402TRPBF, HEXFET® P-Channel MOSFET, 20 V Vdss, 3.7 A Id, 65 mOhm Rds(on) at 4.5 V, SOT-23-3, -55 to 150 °C.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 3.7A (Ta) |
| Power dissipation | 1.3W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1.2V @ 250µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 3.7A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 12 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 633 pF @ 10 V |
Gate threshold voltage maxes at 1.2 V at 250 µA drain current, so logic-level drive from 2.5 V or 4.5 V controllers is sufficient. The gate charge is 12 nC at 5 V, and input capacitance is 633 pF at 10 V drain-source.
Housed in a Micro3™/SOT-23 surface-mount package, the part occupies minimal board area.
