IRLML6344TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-Channel MOSFET, 30V Vdss, 5A Id, 29 mOhm Rds(on) at 4.5V, SOT-23-3 package, -55 to 150°C.

IRLML6344TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLML6344TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C5A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.1V @ 10µA
Rds on (Max) @ id, vgs29mOhm @ 5A, 4.5V
Gate charge (Qg) (Max) @ vgs6.8 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds650 pF @ 25 V

Technical details

IRLML6344TRPBF
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