IRLML6302TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRLML6302TRPBF, P-Channel MOSFET, 20 V Vdss, 780 mA continuous drain, 600 mOhm Rds(on) at 4.5 V, SOT-23 package, -55°C to 150°C operating junction temperature.

IRLML6302TRPBF
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[IN STOCK] In Stock: 691 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLML6302TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.7V, 4.5V
Current - continuous drain (Id) @ 25°C780mA (Ta)
Power dissipation540mW (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.5V @ 250µA
Rds on (Max) @ id, vgs600mOhm @ 610mA, 4.5V
Gate charge (Qg) (Max) @ vgs3.6 nC @ 4.45 V
Input capacitance (Ciss) (Max) @ vds97 pF @ 15 V

Technical details

20 V, 780 mA — the load-switch ceiling

The IRLML6302TRPBF: That current rating places it in the sub-1 A load-switch class — it handles small power rails, battery-protection cut-offs, and signal-level switching, not a 2 A or 3 A rail. The SOT-23 footprint keeps the board area small, but the 540 mW power dissipation ceiling means the thermal budget is tight if you push near the current limit without adequate copper on the drain tab.

On-resistance is specified at 600 mOhm maximum with 4.5 V gate drive and 610 mA drain current. That is a moderate Rds(on) — not a low-Rds(on) part for high-efficiency converters, but entirely adequate for a load switch where the pass transistor sees a few tens of milliamps. The drive voltage window (2.7 V minimum for full enhancement, 4.5 V for the rated Rds(on)) means a 3.3 V logic signal will turn it on, but the on-resistance will be higher than the 600 mOhm figure — budget for that if you are running at 2.7 V gate drive.

ROHS3 compliant.

IRLML6302TRPBF
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