Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRLML2246TRPBF, P-Channel MOSFET, 20 V Vdss, 2.6 A Id, 135 mOhm Rds(on) at 4.5 V, SOT-23-3 package, -55°C to 150°C junction temperature.
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | P-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 20 V |
| Drive voltage (Max rds on, min rds on) | 2.5V, 4.5V |
| Current - continuous drain (Id) @ 25°C | 2.6A (Ta) |
| Power dissipation | 1.3W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±12V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 1.1V @ 10µA |
| Rds on (Max) @ id, vgs | 135mOhm @ 2.6A, 4.5V |
| Gate charge (Qg) (Max) @ vgs | 2.9 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 220 pF @ 16 V |
The junction temperature range spans -55°C to 150°C, covering military and industrial environments.
No end-of-life notice or last-time-buy schedule is in effect, so it is safe to qualify into new production BOMs.