IRLML2244TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® P-Channel MOSFET, IRLML2244TRPBF, 20 V Vdss, 4.3 A continuous drain, 54 mOhm Rds(on) at 4.5 V gate drive, SOT-23 package, -55°C to 150°C operating temperature.

Infineon Technologies IRLML2244TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLML2244TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C4.3A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id1.1V @ 10µA
Rds on (Max) @ id, vgs54mOhm @ 4.3A, 4.5V
Gate charge (Qg) (Max) @ vgs6.9 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds570 pF @ 16 V

Technical details

Gate drive and switching loss budget

Gate charge is 6.9 nC at 4.5 V, and input capacitance is 570 pF at 16 V drain. These numbers are low enough that a GPIO pin with a series resistor can drive the gate at moderate switching frequencies — no dedicated gate driver needed for sub-100 kHz PWM. The ±12 V Vgs maximum gives headroom if the gate is driven from a 12 V rail through a level shifter. The 1.3 W power dissipation at 25°C ambient is the thermal budget for the SOT-23 package. For a 4.3 A load, the conduction loss at 54 mOhm is about 1 W — that leaves only 0.3 W for switching losses before the junction hits 150°C. Derate the continuous current if the board copper area is small or ambient temperature exceeds 70°C.

Active production, no obsolescence worry

ROHS3 compliant. The SOT-23 package is a common industry footprint, so dual-sourcing from other manufacturers is straightforward if the BOM requires a second source.

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