60 V, 1.2 A N-Channel HEXFET in SOT-23
The Infineon IRLML2060TRPBF is a HEXFET N-Channel MOSFET rated for 60 V drain-source and 1.2 A continuous drain current at 25°C, housed in a Micro3/SOT-23 surface-mount package. With a maximum Rds(on) of 480 mOhm at 10 V gate drive and a gate charge of just 0.67 nC at 4.5 V, it is designed for low-power load switching, DC-DC converter legs, and signal-level switching where board space is tight. The -55°C to 150°C junction temperature range qualifies it for industrial and automotive under-hood environments.
Gate drive and switching characteristics
The 0.67 nC gate charge at 4.5 V allows direct drive from a microcontroller GPIO. The 64 pF input capacitance at 25 V drain-source keeps switching losses low in moderate-frequency applications.
Lifecycle and sourcing
The IRLML2060TRPBF is listed as Active with ROHS3 compliance.
