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Infineon Technologies IRLML2030TRPBF
Infineon Technologies

IRLML2030TRPBF HEXFET N-Ch MOSFET, 30V 2.7A SOT-23

MPNIRLML2030TRPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRLML2030TRPBF, 30 V Vdss, 2.7 A continuous drain, 100 mOhm Rds(on) at 10 V, SOT-23-3 package, -55 to 150 °C junction.

$0.36Ref. price · indicative, final on quote
IRLML2030TRPBF datasheet
PackagingTO-236-3, SC-59, SOT-23-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
  • PayPal buyer protectionPay by T/T, PayPal or Payoneer — card payments covered end to end.

Specifications

IRLML2030TRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.7A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.3V @ 25µA
Rds on (Max) @ id, vgs100mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs1 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds110 pF @ 15 V

Product details

SOT-23 N-channel for low-side switching

The Infineon IRLML2030TRPBF is a 30 V, 2.7 A N-channel HEXFET MOSFET in a three-lead SOT-23-3 package.

Gate drive and switching — 1 nC total charge

Total gate charge is 1 nC at 4.5 V, and the drive voltage range spans 4.5 V to 10 V for minimum on-resistance. Input capacitance is 110 pF at 15 V drain-source, so the gate rise time with a 10 Ω drive resistor is roughly 1 ns — fast enough for most low-side PWM applications, but the loop inductance in a SOT-23 layout must be kept short to avoid ringing.

Temperature range and power dissipation

The junction is rated from -55 °C to 150 °C, covering military and industrial ambient extremes. The practical limit is the 1.3 W power dissipation at 25 °C ambient in still air — derate above 25 °C per the datasheet curve. For continuous 2.7 A load, the duty cycle must be low or the board copper area must sink the heat.

Lifecycle and sourcing

It is ROHS3 compliant.

Frequently asked questions

Can I use IRLML2030TRPBF for 5V logic?

Yes. The gate threshold voltage maximum is 2.3 V at 25 µA drain current, and the recommended drive voltage range includes 4.5 V. A 5 V logic output can turn the MOSFET fully on.

What is the equivalent replacement for IRLML2030TRPBF?

The IPD50R950CEAUMA1 is a different class — 500 V, 950 mOhm, DPAK — and is not a functional replacement for this 30 V SOT-23 part.

Is IRLML2030TRPBF compatible with IRLML2030?

The IRLML2030TRPBF is the tape-and-reel packaged variant of the IRLML2030 die. The electrical specifications — 30 V Vdss, 2.7 A Id, 100 mOhm Rds(on) — are identical. The TR suffix indicates reel packaging; the CT suffix indicates cut tape.