SOT-23 N-channel for low-side switching
The Infineon IRLML2030TRPBF is a 30 V, 2.7 A N-channel HEXFET MOSFET in a three-lead SOT-23-3 package.
Gate drive and switching — 1 nC total charge
Total gate charge is 1 nC at 4.5 V, and the drive voltage range spans 4.5 V to 10 V for minimum on-resistance. Input capacitance is 110 pF at 15 V drain-source, so the gate rise time with a 10 Ω drive resistor is roughly 1 ns — fast enough for most low-side PWM applications, but the loop inductance in a SOT-23 layout must be kept short to avoid ringing.
Temperature range and power dissipation
The practical limit is the 1.3 W power dissipation at 25 °C ambient in still air — derate above 25 °C per the datasheet curve. For continuous 2.7 A load, the duty cycle must be low or the board copper area must sink the heat.
It is ROHS3 compliant.