IRLML0100TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-channel MOSFET, IRLML0100TRPBF, 100V Vdss, 1.6A continuous drain, 220mOhm Rds(on) at 10V, SOT-23-3 surface-mount package.

Infineon Technologies IRLML0100TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLML0100TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage100 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C1.6A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 25µA
Rds on (Max) @ id, vgs220mOhm @ 1.6A, 10V
Gate charge (Qg) (Max) @ vgs2.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds290 pF @ 25 V

Technical details

100V N-channel in a SOT-23 — what it buys you

The IRLML0100TRPBF: The 220mOhm maximum on-resistance at 1.6A and 10V gate drive defines the conduction loss floor — at full rated current the dissipation is about 0.56W, which sits inside the 1.3W package limit but leaves little thermal headroom without copper-area heatsinking on the PCB.

Gate threshold voltage is a maximum of 2.5V at 25µA drain current, so the part turns on cleanly with 3.3V or 5V logic-level gate drive — the drive voltage range for minimum Rds(on) is 4.5V to 10V. Total gate charge is 2.5nC at 4.5V, and input capacitance is 290pF at 25V drain bias — these are low enough that a general-purpose gate driver or even a microcontroller GPIO can switch it at moderate frequencies without excessive drive current.

Temperature range and board-level fit

The SOT-23 footprint is standard — the Micro3/SOT-23 supplier device package matches the TO-236-3 / SC-59 case outline.

It is ROHS3 compliant.

IRLML0100TRPBF
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