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Infineon Technologies IRLML0060TRPBF

IRLML0060TRPBF N-Channel MOSFET, 60V 2.7A SOT-23

MPNIRLML0060TRPBF
End of Life

Infineon HEXFET® N-Channel MOSFET, IRLML0060TRPBF, 60 V drain-source, 2.7 A continuous drain, 92 mOhm Rds(on) at 10 V, SOT-23-3 package, -55°C to 150°C operating temperature.

$0.43Ref. price · indicative, final on quote
PackagingTO-236-3, SC-59, SOT-23-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLML0060TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage60 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C2.7A (Ta)
Power dissipation1.25W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 25µA
Rds on (Max) @ id, vgs92mOhm @ 2.7A, 10V
Gate charge (Qg) (Max) @ vgs2.5 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds290 pF @ 25 V

Product details

The IRLML0060TRPBF: The 92 mOhm Rds(on) at 10 V gate drive sets the conduction loss floor at 2.7 A: I²R = 0.67 W, which combined with the 1.25 W package power limit means derating is required above 70°C ambient in still air. Total gate charge is 2.5 nC at 4.5 V gate drive, so a 3.3 V GPIO sourcing 2 mA can switch the gate in under 1.3 µs — fast enough for 100 kHz PWM in a load-switch or low-side driver role. Input capacitance is 290 pF at 25 V drain-source. Gate-drive power is negligible at moderate switching frequencies.

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