The IRLML0060TRPBF: The 92 mOhm Rds(on) at 10 V gate drive sets the conduction loss floor at 2.7 A: I²R = 0.67 W, which combined with the 1.25 W package power limit means derating is required above 70°C ambient in still air. Total gate charge is 2.5 nC at 4.5 V gate drive, so a 3.3 V GPIO sourcing 2 mA can switch the gate in under 1.3 µs — fast enough for 100 kHz PWM in a load-switch or low-side driver role. Input capacitance is 290 pF at 25 V drain-source. Gate-drive power is negligible at moderate switching frequencies.
IRLML0060TRPBF
Infineon Technologies · HEXFET® Series
Infineon HEXFET® N-Channel MOSFET, IRLML0060TRPBF, 60 V drain-source, 2.7 A continuous drain, 92 mOhm Rds(on) at 10 V, SOT-23-3 package, -55°C to 150°C operating temperature.
[IN STOCK] In Stock: 21,472 pcs
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 60 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 2.7A (Ta) |
| Power dissipation | 1.25W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2.5V @ 25µA |
| Rds on (Max) @ id, vgs | 92mOhm @ 2.7A, 10V |
| Gate charge (Qg) (Max) @ vgs | 2.5 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 290 pF @ 25 V |
Technical details
IRLML0060TRPBF
[ALLOC] verified