IRLML0040TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® N-channel MOSFET, IRLML0040TRPBF, 40 V drain-source, 3.6 A continuous drain, 56 mOhm Rds(on) at 10 V, SOT-23 surface-mount package.

IRLML0040TRPBF
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MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLML0040TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C3.6A (Ta)
Power dissipation1.3W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-236-3, SC-59, SOT-23-3
Vgs(th) (Max) @ id2.5V @ 25µA
Rds on (Max) @ id, vgs56mOhm @ 3.6A, 10V
Gate charge (Qg) (Max) @ vgs3.9 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds266 pF @ 25 V

Technical details

56 mOhm at 3.6 A — the conduction-loss floor

The IRLML0040TRPBF: That Rds(on) figure sets the conduction-loss budget for a load switch or low-side driver in a SOT-23 footprint — at 3.6 A the dissipation is about 0.73 W, which sits inside the 1.3 W package limit but leaves little margin for ambient temperature above 25 °C without derating.

SOT-23 footprint and thermal reality

The SOT-23 footprint is a standard small-signal outline. Input capacitance is 266 pF at Vds = 25 V, and total gate charge is 3.9 nC at Vgs = 4.5 V — both low enough that a standard GPIO pin or a small gate-driver IC can switch the MOSFET at moderate frequencies without excessive drive current.

IRLML0040TRPBF
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