Infineon Technologies · HEXFET® Series
Infineon HEXFET series N-Channel MOSFET, 30 V drain-source, 5.3 A continuous drain at 25°C, 27 mOhm max on-resistance at 10 V gate drive, SOT-23 surface-mount package, -55°C to 150°C operating junction temperature.
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 5.3A (Ta) |
| Power dissipation | 1.3W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-236-3, SC-59, SOT-23-3 |
| Vgs(th) (Max) @ id | 2.3V @ 25µA |
| Rds on (Max) @ id, vgs | 27mOhm @ 5.2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 2.6 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 382 pF @ 15 V |
The IRLML0030TRPBF: Total gate charge is 2.6 nC at 4.5 V, and input capacitance is 382 pF at 15 V drain-source.
Maximum power dissipation is 1.3 W at 25°C ambient. In practice, the 5.3 A current rating is thermally limited — a 5 A load at 27 mOhm dissipates 0.68 W, leaving about 0.6 W headroom before hitting the 1.3 W ceiling.
