55 V, 3.8 A N-channel HEXFET in a compact SOT-223
The IRLL2705TRPBF is an N-channel enhancement-mode MOSFET from the HEXFET series, rated for a drain-to-source voltage of 55 V and a continuous drain current of 3.8 A at 25°C ambient. It comes in a surface-mount SOT-223 package, which keeps the footprint small but limits power dissipation to 1 W — so the thermal budget is the real constraint for continuous load current above a couple of amps. Rds(on) is 40 mOhm at 3.8 A with 10 V gate drive.
Gate charge and switching profile
Gate charge is 48 nC at 10 V; input capacitance is 870 pF at 25 V.
Temperature range and application fit
Junction temperature range is -55°C to 150°C.
Lifecycle and sourcing
The IRLL2705TRPBF carries an Active lifecycle status and is ROHS3 compliant.
