Infineon Technologies · HEXFET® Series
Infineon (International Rectifier) IRLL2705TRPBF, HEXFET® N-Channel MOSFET, 55 V Vdss, 3.8 A continuous drain (Ta), 40 mOhm Rds(on) @ 3.8 A, 10 V gate drive, SOT-223 surface-mount package, -55°C to 150°C operating junction temperature.
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.8A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 40mOhm @ 3.8A, 10V |
| Gate charge (Qg) (Max) @ vgs | 48 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 870 pF @ 25 V |
The IRLL2705TRPBF is an N-channel enhancement-mode MOSFET from the HEXFET series, rated for a drain-to-source voltage of 55 V and a continuous drain current of 3.8 A at 25°C ambient. It comes in a surface-mount SOT-223 package, which keeps the footprint small but limits power dissipation to 1 W — so the thermal budget is the real constraint for continuous load current above a couple of amps. Rds(on) is 40 mOhm at 3.8 A with 10 V gate drive.
