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Infineon Technologies IRLL024ZTRPBF
Infineon Technologies

IRLL024ZTRPBF MOSFET N-CH 55V 5A SOT-223, 60 mOhm Rds(on)

MPNIRLL024ZTRPBF
End of Life

Infineon HEXFET IRLL024ZTRPBF, N-Channel MOSFET, 55 V Vdss, 5 A Id, 60 mOhm Rds(on) at 10 V, SOT-223 package, -55 to 150 °C.

$0.81Ref. price · indicative, final on quote
IRLL024ZTRPBF datasheet
PackagingTO-261-4, TO-261AA
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRLL024ZTRPBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeSurface Mount
Drain to source voltage55 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C5A (Tc)
Power dissipation1W (Ta)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±16V
TechnologyMOSFET (Metal Oxide)
CaseTO-261-4, TO-261AA
Vgs(th) (Max) @ id3V @ 250µA
Rds on (Max) @ id, vgs60mOhm @ 3A, 10V
Gate charge (Qg) (Max) @ vgs11 nC @ 5 V
Input capacitance (Ciss) (Max) @ vds380 pF @ 25 V

Product details

55 V, 5 A N-channel switch in SOT-223

It is housed in a surface-mount SOT-223 package with the drain tab as the primary thermal path.

Gate charge and drive voltage — switching budget

The specified drive voltage range of 4.5 V to 10 V for achieving rated Rds(on) lets the designer trade gate-drive complexity against conduction loss. Input capacitance of 380 pF at 25 V drain-source confirms the gate drive load is light; a standard microcontroller GPIO with 10 mA source-sink capability charges the gate in under 40 ns.

Thermal and temperature range

Maximum power dissipation is 1 W at 25 °C ambient; the SOT-223 drain tab must be soldered to an adequate copper area on the PCB to keep the junction below the 150 °C ceiling at full current. Derate the 5 A continuous current rating above 25 °C case temperature — at 100 °C case temperature the allowable drain current drops to approximately 3.5 A, following the typical MOSFET derating curve.

Frequently asked questions

What is the Rds(on) of IRLL024ZTRPBF?

Maximum on-resistance is 60 mOhm at 3 A drain current with 10 V gate-to-source drive. At 4.5 V drive the Rds(on) is higher — the datasheet typical curve shows approximately 80 mOhm at 4.5 V.

What is the equivalent or second-source for IRLL024ZTRPBF?

The IPD50R950CEAUMA1 is a 500 V CoolMOS device in a different voltage class and package — it is not a functional replacement for this 55 V SOT-223 part.