IRLL024NTRPBF HEXFET® N-Ch 55V 3.1A SOT-223 — Infineon | ICBOMS
MPNIRLL024NTRPBF
End of Life
MOSFET N-CH 55V 3.1A SOT223
$0.91Ref. price · indicative, final on quote
PackagingTO-261-4, TO-261AA
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026
Specifications
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.1A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15.6 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 25 V |