IRLL024NTRPBF
Infineon Technologies · HEXFET® Series
MOSFET N-CH 55V 3.1A SOT223
[IN STOCK] In Stock: 2,034 pcs
MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 3.1A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 65mOhm @ 3.1A, 10V |
| Gate charge (Qg) (Max) @ vgs | 15.6 nC @ 5 V |
| Input capacitance (Ciss) (Max) @ vds | 510 pF @ 25 V |
IRLL024NTRPBF
[ALLOC] verified