Infineon Technologies · HEXFET® Series
IRLL014NTRPBF, Infineon HEXFET® N-channel MOSFET, 55 V drain-source, 2 A continuous drain, 140 mΩ Rds(on) at 10 V, SOT-223 surface-mount package, -55°C to 150°C junction temperature.
MOQ 5 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Surface Mount |
| Drain to source voltage | 55 V |
| Drive voltage (Max rds on, min rds on) | 4V, 10V |
| Current - continuous drain (Id) @ 25°C | 2A (Ta) |
| Power dissipation | 1W (Ta) |
| Operating temperature | -55°C ~ 150°C (TJ) |
| Package | Tape & Reel (TR); Cut Tape (CT) |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-261-4, TO-261AA |
| Vgs(th) (Max) @ id | 2V @ 250µA |
| Rds on (Max) @ id, vgs | 140mOhm @ 2A, 10V |
| Gate charge (Qg) (Max) @ vgs | 14 nC @ 10 V |
| Input capacitance (Ciss) (Max) @ vds | 230 pF @ 25 V |
The drive voltage range is specified from 4 V (minimum Rds(on) condition) to 10 V (maximum Rds(on) condition).
The SOT-223 package has a visible drain tab on the top and three pins on the bottom row. Orientation is clear from the chamfered corner.
