IRLHS2242TRPBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRLHS2242TRPBF, P-Channel MOSFET, 20V Vdss, 7.2A (Ta) / 15A (Tc) continuous drain, 31mOhm Rds(on) at 4.5V, 12 nC gate charge, -55°C to 150°C, 6-PQFN (2x2) DFN2020 package.

Infineon Technologies IRLHS2242TRPBF
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[IN STOCK] In Stock: 11 pcs
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MOQ 1 · Tape & Reel (TR); Cut Tape (CT) · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLHS2242TRPBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeP-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C7.2A (Ta), 15A (Tc)
Power dissipation2.1W (Ta), 9.6W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case6-PowerVDFN
Vgs(th) (Max) @ id1.1V @ 10µA
Rds on (Max) @ id, vgs31mOhm @ 8.5A, 4.5V
Gate charge (Qg) (Max) @ vgs12 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds877 pF @ 10 V

Technical details

P-channel power switch for tight spots

The 6-PQFN (2x2) package keeps the footprint small — 2 mm by 2 mm — but that exposed pad needs a good thermal via pattern to pull heat out. With 2.1 W dissipation in still air and 9.6 W when the case is cooled, the board layout determines what current you can actually hold. The gate threshold is tight at 1.1 V maximum at 10 µA, which means 2.5 V logic can turn it fully on, though the lowest Rds(on) is specified at 4.5 V.

Total gate charge is 12 nC at 10 V. Input capacitance is 877 pF at 10 V drain-source.

IRLHS2242TRPBF
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