Low-voltage workhorse — 3 mOhm at 4.5 V gate drive
The Infineon IRLH6224TRPBF is an N-channel HEXFET power MOSFET in an 8-PowerTDFN package (supplier device package 8-PQFN 5x6). The 3 mOhm max Rds(on) is specified at 4.5 V, with a minimum drive voltage of 2.5 V. Continuous drain current is rated at 28 A at 25°C ambient (Ta) and 105 A at 25°C case temperature (Tc) — the spread tells you the package thermal resistance is the bottleneck, not the silicon.
Gate charge and switching loss budget
Total gate charge Qg is 86 nC at Vgs = 10 V, with an input capacitance Ciss of 3710 pF at Vds = 10 V. Maximum gate-to-source voltage is ±12 V — tighter than the ±20 V common on higher-voltage MOSFETs. If your gate driver overshoots on the falling edge, the oxide sees stress. A 10 V zener clamp across the gate-source is cheap insurance in a noisy layout.
Thermal design — the package is the limit
Power dissipation is rated at 3.6 W at ambient (Ta) and 52 W at case temperature (Tc).
Lifecycle and sourcing reality
It is ROHS3 compliant.