Skip to main content
Log in
Infineon Technologies IRLH6224TRPBF

IRLH6224TRPBF N-Channel MOSFET, 20V, 3mOhm, HEXFET, 8-PQFN

MPNIRLH6224TRPBF
End of Life

Infineon HEXFET series, IRLH6224TRPBF, N-Channel MOSFET, 20 V Vdss, 3 mOhm Rds(on) max at 4.5 V, 105 A continuous drain at Tc, 86 nC gate charge, 8-PQFN (5x6) package, -55°C to 150°C junction temperature.

$1.37Ref. price · indicative, final on quote
Infineon Technologies IRLH6224TRPBF datasheet (PDF)
Packaging8-PowerTDFN
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Jul 2026

Specifications

IRLH6224TRPBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingSurface Mount
Drain to source voltage20 V
Drive voltage (Max rds on, min rds on)2.5V, 4.5V
Current - continuous drain (Id) @ 25°C28A (Ta), 105A (Tc)
Power dissipation3.6W (Ta), 52W (Tc)
Operating temperature-55°C ~ 150°C (TJ)
PackageTape & Reel (TR); Cut Tape (CT)
Vgs±12V
TechnologyMOSFET (Metal Oxide)
Case8-PowerTDFN
Vgs(th) (Max) @ id1.1V @ 50µA
Rds on (Max) @ id, vgs3mOhm @ 20A, 4.5V
Gate charge (Qg) (Max) @ vgs86 nC @ 10 V
Input capacitance (Ciss) (Max) @ vds3710 pF @ 10 V

Product details

Low-voltage workhorse — 3 mOhm at 4.5 V gate drive

The Infineon IRLH6224TRPBF is an N-channel HEXFET power MOSFET in an 8-PowerTDFN package (supplier device package 8-PQFN 5x6). The 3 mOhm max Rds(on) is specified at 4.5 V, with a minimum drive voltage of 2.5 V.

Total gate charge Qg is 86 nC at Vgs = 10 V, with an input capacitance Ciss of 3710 pF at Vds = 10 V. Maximum gate-to-source voltage is ±12 V — tighter than the ±20 V common on higher-voltage MOSFETs. If your gate driver overshoots on the falling edge, the oxide sees stress. A 10 V zener clamp across the gate-source is cheap insurance in a noisy layout.

Thermal design — the package is the limit

Power dissipation is rated at 3.6 W at ambient (Ta) and 52 W at case temperature (Tc).

It is ROHS3 compliant.

Frequently asked questions

What is the Rds(on) of IRLH6224TRPBF?

Maximum on-resistance is 3 mOhm at Id = 20 A and Vgs = 4.5 V. This is specified at the 4.5 V gate drive level, making it suitable for 5 V logic-driven designs.