100 A drain in a 5x6 PQFN — where the thermal pad earns its keep
The IRLH5030TRPBF is an Infineon HEXFET N-channel power MOSFET rated for 100 V drain-to-source and 100 A continuous drain current at the case (Tc), with a 13 A limit at ambient (Ta) that tells you exactly where the thermal bottleneck sits.
At 9 mOhm max with 10 V on the gate, the conduction loss at 50 A is 22.5 W — that number lands squarely inside the 156 W Tc power dissipation rating, but only if the 8-PQFN's exposed pad is soldered to a substantial copper plane. The 94 nC total gate charge at 10 V means a standard gate driver with 1 A peak drive can switch this FET in the tens of nanoseconds; at 100 kHz the gate drive loss is about 94 mW, negligible next to the conduction loss.
The 8-PQFN (5x6 mm) package has a large exposed pad on the bottom — that's the main thermal path, but it also means the part soaks heat during rework. A preheat plate at 150°C for 90 seconds before hitting the pad with hot air at 300°C will lift the part without lifting the pad. The orientation mark is a small chamfer on pin 1 corner; it's visible under magnification but easy to miss on a rework scope — mark the board before removal.