IRLB8748PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET IRLB8748PBF, N-Channel MOSFET, 30V Vdss, 92A Id, 4.8mOhm Rds(on) at 10V, 23nC Qg, TO-220AB through-hole, -55 to 175°C.

Infineon Technologies IRLB8748PBF
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Technical specifications

IRLB8748PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C92A (Tc)
Power dissipation75W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.35V @ 50µA
Rds on (Max) @ id, vgs4.8mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs23 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds2139 pF @ 15 V

Technical details

30V, 92A, 4.8mOhm — the TO-220 workhorse

The IRLB8748PBF: Gate charge is 23 nC at 4.5 V. The 2.35 V maximum threshold at 50 µA confirms it turns on from logic-level drive.

Where the 175°C rating matters

Input capacitance is 2139 pF at 15 V Vds.

IRLB8748PBF
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