IRLB8743PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET N-channel MOSFET, 30 V Vdss, 78 A continuous drain at 25°C, 3.2 mOhm Rds(on) max at 40 A / 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IRLB8743PBF
[IN STOCK] In Stock: 52 pcs
$2.05/ pc

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MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T

Technical specifications

IRLB8743PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C78A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.35V @ 100µA
Rds on (Max) @ id, vgs3.2mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds5110 pF @ 15 V

Technical details

30 V / 78 A — low Rds(on) for high-efficiency switching

The IRLB8743PBF is an N-channel MOSFET with 30 V drain-to-source voltage and 78 A continuous drain current.

Total gate charge is 54 nC at 4.5 V. Input capacitance Ciss is 5110 pF at 15 V drain bias.

It is ROHS3 compliant. The series is Infineon's HEXFET family, a mature trench-technology platform with broad second-source availability from other manufacturers (e.g., STMicroelectronics, ON Semiconductor) for pin-compatible TO-220 N-channel 30 V / 78 A devices, though no official cross-reference is listed in this record.

IRLB8743PBF
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