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Infineon Technologies IRLB8743PBF
Infineon Technologies

IRLB8743PBF HEXFET N-Channel MOSFET, 30 V, 78 A, TO-220AB

MPNIRLB8743PBF
End of Life

Infineon HEXFET N-channel MOSFET, 30 V Vdss, 78 A continuous drain at 25°C, 3.2 mOhm Rds(on) max at 40 A / 10 V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$1.48Ref. price · indicative, final on quote
IRLB8743PBF datasheet
PackagingTO-220-3
StockContact for availability
MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
  • Date & lot codes on quoteStated per line before you commit; label photos on request.
  • MSL-compliant ESD packingMoisture-sealed bags with indicator cards; reels photo-verified.
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Specifications

IRLB8743PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting typeThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C78A (Tc)
Power dissipation140W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.35V @ 100µA
Rds on (Max) @ id, vgs3.2mOhm @ 40A, 10V
Gate charge (Qg) (Max) @ vgs54 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds5110 pF @ 15 V

Product details

30 V / 78 A — low Rds(on) for high-efficiency switching

The IRLB8743PBF is an N-channel MOSFET with 30 V drain-to-source voltage and 78 A continuous drain current.

Gate charge and switching speed

Total gate charge is 54 nC at 4.5 V. Input capacitance Ciss is 5110 pF at 15 V drain bias.

Package and temperature range

Housed in a TO-220-3 through-hole package (supplier device package TO-220AB), the IRLB8743PBF is a standard three-lead vertical mount.

Lifecycle and compliance

It is ROHS3 compliant. The series is Infineon's HEXFET family, a mature trench-technology platform with broad second-source availability from other manufacturers (e.g., STMicroelectronics, ON Semiconductor) for pin-compatible TO-220 N-channel 30 V / 78 A devices, though no official cross-reference is listed in this record.

Frequently asked questions

What is the Vgs threshold of IRLB8743PBF?

The maximum gate threshold voltage is 2.35 V at 100 µA drain current. This is the Vgs(th) spec — the gate voltage at which the FET just begins to conduct. For full enhancement to the rated Rds(on), apply 4.5 V (minimum) or 10 V (maximum) gate drive.

Is IRLB8743PBF RoHS compliant?

Yes, the IRLB8743PBF is ROHS3 compliant — the suffix 'PBF' indicates lead-free (Pb-free) plating on the leads.