IRLB8314PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® IRLB8314PBF, N-Channel MOSFET, 30 V Vdss, 171 A Id, TO-220-3, 2.4 mOhm Rds(on) at 68 A, 10 V, -55°C to 175°C.

Infineon Technologies IRLB8314PBF
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Technical specifications

IRLB8314PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage30 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C171A (Tc)
Power dissipation125W (Tc)
Operating temperature-55°C ~ 175°C (TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.2V @ 100µA
Rds on (Max) @ id, vgs2.4mOhm @ 68A, 10V
Gate charge (Qg) (Max) @ vgs60 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds5050 pF @ 15 V

Technical details

171 A continuous drain — what it takes to use it

The TO-220 package with a large copper pad on the heatsink side is the only way to get near that continuous rating.

The maximum on-resistance is 2.4 mOhm at a drain current of 68 A and a gate drive of 10 V.

Logic-level gate drive — 4.5 V minimum

The gate threshold voltage is a maximum of 2.2 V at 100 µA, and the drive voltage range specified for Rds(on) is 4.5 V to 10 V.

Wider temperature range than typical

Input capacitance and switching speed

The input capacitance is 5050 pF at 15 V drain-source.

IRLB8314PBF
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