30 V, 78 A N-channel HEXFET — low-voltage switching workhorse
The Infineon IRLB4132PBF is a 30 V, 78 A N-channel MOSFET from the HEXFET series, built on a standard metal-oxide planar trench process. It is specified for switching and linear applications where the bus voltage stays at or below the 30 V Vdss ceiling — typical 12 V or 24 V rails in power supplies, motor drives, battery management, and DC-DC converters. The gate threshold is specified at 2.35 V maximum at 100 µA, and the drive voltage range of 4.5 V to 10 V means a 5 V logic-level gate signal can turn it on fully, though the lowest Rds(on) is achieved at 10 V.
The 54 nC gate charge at 4.5 V is moderate for a 78 A device. A gate driver delivering 1 A can switch it in about 54 ns, but the 5110 pF input capacitance at 15 V drain-source means the driver sees a capacitive load that slows the edge if the gate resistor is not sized for the total Qg. Operating junction temperature spans -55°C to 175°C, so the part is comfortable in engine-bay, industrial oven, or outdoor telecom enclosures where ambient heat pushes the junction near the upper limit. The 140 W dissipation at case temperature assumes a heatsink with a thermal resistance low enough to keep the junction below 175°C under worst-case load.
Through-hole TO-220 — heatsink and assembly notes
The TO-220-3 (TO-220AB) through-hole package is the standard three-lead power tab. The metal tab is the drain, so the heatsink mounting surface must be electrically isolated or the heatsink itself must float. The through-hole leads suit wave-solder assembly and manual rework, and the package accommodates a screw-mount or clip-on heatsink for the 140 W dissipation.
Active lifecycle and supply posture
No stock-holding claim is made; the supply channel is quoted per RFQ.