IRLB4030PBF
Infineon Technologies · HEXFET® Series
MOSFET N-CH 100V 180A TO220AB
[IN STOCK] In Stock: 75 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 100 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 180A (Tc) |
| Power dissipation | 370W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±16V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.5V @ 250µA |
| Rds on (Max) @ id, vgs | 4.3mOhm @ 110A, 10V |
| Gate charge (Qg) (Max) @ vgs | 130 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 11360 pF @ 50 V |
IRLB4030PBF
[ALLOC] verified