The -55 °C to 175 °C junction-temperature range covers automotive under-hood and industrial enclosure environments.
It is ROHS3 compliant and lead-free. No last-time-buy window is open, and no direct replacement is needed for new designs.
IRLB3813PBF
Infineon Technologies · HEXFET® Series
Infineon HEXFET® IRLB3813PBF, N-Channel MOSFET, 30 V Vdss, 260 A continuous drain, 1.95 mOhm Rds(on) at 10 V, TO-220AB through-hole package.
[IN STOCK] In Stock: 209 pcs
MOQ 1 · Tube · RoHS · EIA-481 · DAP/DDP · T/T
Technical specifications
| Parameter / Attribute | Specification / Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 260A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.35V @ 150µA |
| Rds on (Max) @ id, vgs | 1.95mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 86 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 8420 pF @ 15 V |
Technical details
IRLB3813PBF
[ALLOC] verified