Infineon HEXFET® IRLB3813PBF, N-Channel MOSFET, 30 V Vdss, 260 A continuous drain, 1.95 mOhm Rds(on) at 10 V, TO-220AB through-hole package.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 260A (Tc) |
| Power dissipation | 230W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.35V @ 150µA |
| Rds on (Max) @ id, vgs | 1.95mOhm @ 60A, 10V |
| Gate charge (Qg) (Max) @ vgs | 86 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 8420 pF @ 15 V |
The 230 W maximum power dissipation at case temperature is the package limit with an infinite heatsink. The -55 °C to 175 °C junction-temperature range covers automotive under-hood and industrial enclosure environments.
It is ROHS3 compliant and lead-free. No last-time-buy window is open, and no direct replacement is needed for new designs.
The maximum on-resistance is 1.95 mOhm at a drain current of 60 A with a 10 V gate-to-source drive.
No, the IRLB3813PBF is listed as Active in production with no end-of-life notice from Infineon.
Yes, it is ROHS3 compliant and lead-free per the manufacturer's compliance declaration.
Yes, its 30 V Vdss and 260 A continuous rating suit low-voltage DC motor drives and brushless DC motor controllers, provided the gate-drive voltage is at least 4.5 V and the switching frequency is kept within the thermal budget of the heatsink.
The IPD50R950CEAUMA1 is a different-class device (500 V, 4.3 A, surface-mount DPAK) and is not a functional substitute for the IRLB3813PBF. For a same-class alternative, look at other Infineon 30 V TO-220AB N-channel MOSFETs with similar Rds(on) and current ratings.