IRLB3034PBF

Infineon Technologies · HEXFET® Series

Infineon HEXFET® series, IRLB3034PBF, N-Channel MOSFET, 40 V drain-source, 195 A continuous drain, 1.7 mOhm Rds(on) at 10V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

Infineon Technologies IRLB3034PBF
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[IN STOCK] In Stock: 132 pcs
$1.33/ pc

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Technical specifications

IRLB3034PBF specifications
Parameter / AttributeSpecification / Value
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs1.7mOhm @ 195A, 10V
Gate charge (Qg) (Max) @ vgs162 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds10315 pF @ 25 V

Technical details

What this 40V N-channel HEXFET is built for

Its 1.7 mOhm maximum on-resistance at 10V gate drive keeps conduction losses low in high-current paths like battery isolation, motor drives, and DC-DC converter output stages. The TO-220AB through-hole package suits point-of-load power stages where a heatsink is practical and board-space is not the primary constraint.

Thermal and mechanical fit

The TO-220AB package dissipates up to 375W at the case. Junction temperature range is -55°C to 175°C.

Sourcing and lifecycle status

For current pricing and availability, submit an RFQ through the independent distribution channel — confirmed lead time and quantity pricing are provided at quote time.

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