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Infineon Technologies IRLB3034PBF — Discrete Semiconductors

IRLB3034PBF HEXFET N-Channel MOSFET, 40V 195A TO-220AB

MPNIRLB3034PBF
Active

Infineon HEXFET® series, IRLB3034PBF, N-Channel MOSFET, 40 V drain-source, 195 A continuous drain, 1.7 mOhm Rds(on) at 10V, TO-220-3 through-hole package, -55°C to 175°C junction temperature.

$4.1600Ref. price · indicative, final on quote
PackagingTO-220-3
RoHSROHS3 Compliant
SeriesHEXFET®
Independent supplier — new & surplus stockAuthenticity-screened · ESD-safe packingListing updated Aug 2026

Specifications

IRLB3034PBF specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
MountingThrough Hole
Drain to source voltage40 V
Drive voltage (Max rds on, min rds on)4.5V, 10V
Current - continuous drain (Id) @ 25°C195A (Tc)
Power dissipation375W (Tc)
Operating temperature-55°C~175°C(TJ)
PackageTube
Vgs±20V
TechnologyMOSFET (Metal Oxide)
CaseTO-220-3
Vgs(th) (Max) @ id2.5V @ 250µA
Rds on (Max) @ id, vgs1.7mOhm @ 195A, 10V
Gate charge (Qg) (Max) @ vgs162 nC @ 4.5 V
Input capacitance (Ciss) (Max) @ vds10315 pF @ 25 V

Product details

What this 40V N-channel HEXFET is built for

Its 1.7 mOhm maximum on-resistance at 10V gate drive keeps conduction losses low in high-current paths like battery isolation, motor drives, and DC-DC converter output stages. The TO-220AB through-hole package suits point-of-load power stages where a heatsink is practical and board-space is not the primary constraint.

Thermal and mechanical fit

The TO-220AB package dissipates up to 375W at the case. Junction temperature range is -55°C to 175°C.

Sourcing and lifecycle status

For current pricing and availability, submit an RFQ through the independent distribution channel — confirmed lead time and quantity pricing are provided at quote time.

Frequently asked questions

Is IRLB3034PBF a logic-level MOSFET?

Yes. The maximum gate threshold voltage of 2.5V at 250 µA drain current qualifies it as a logic-level MOSFET, fully turn-on with 5V gate drive.