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Infineon Technologies IRL8114PBF — Discrete Semiconductors

IRL8114PBF MOSFET N-CH 30V 90A TO220AB, 4.5 mOhm Rds(on)

MPNIRL8114PBF
Active

Infineon HEXFET® IRL8114PBF, N-Channel MOSFET, 30 V, 90 A, 4.5 mOhm Rds(on) @ 40 A 10 V, TO220AB, Through Hole, -55°C to 175°C TJ.

$1.12Ref. price · indicative, final on quote
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MOQ1 pcs
  • 100% new & originalTraceable channels only — no refurbs, no pulls, no remarked parts.
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Specifications

IRL8114PBF Technical Specifications
ParameterValue
SeriesHEXFET®
FET typeN-Channel
Mounting_typeThrough Hole
Operating temperature high-55°C to 175°C(TJ)
Vgs±20 V
Power_w115.0
Package_typeBulk
Capacitance_uf0.0027
Product_statusActive
Supply_voltage_v30.0
Vgs(Th) (Max) @ id2.25 V @ 250µA
Switching_current_a90.0
Rds on (Max) @ id, vgs4.5mOhm @ 40 A, 10 V
Gate charge (Qg) (Max) @ vgs29 nC @ 4.5 V

Product details

What the IRL8114PBF is and where it fits

The Infineon IRL8114PBF is an N-channel HEXFET® power MOSFET in a TO220AB through-hole package, rated for 30 V drain-source and 90 A continuous drain current. Its key distinguishing feature is a maximum on-resistance of 4.5 mOhm at 40 A with a 10 V gate drive, which keeps conduction losses low in high-current switching applications. The device is built for power conversion, motor drives, battery management, and DC-DC converter stages where a TO220AB package is preferred for heatsinking and board-level serviceability.

Gate drive and threshold — why the 2.25 V Vgs(th) matters

With a maximum gate threshold voltage of 2.25 V at 250 µA, the IRL8114PBF is a logic-level MOSFET. It can be driven directly from a microcontroller output without a separate gate-driver stage, simplifying the BOM in low-voltage control circuits.

Thermal and package considerations

Rated for a junction temperature range of -55°C to 175°C, the IRL8114PBF handles high ambient temperatures common in motor-drive cabinets, power-supply enclosures, and under-hood automotive environments. The TO220AB package allows direct mounting to a heatsink with a single screw, and the through-hole leads suit wave-solder assembly or hand-rework in prototype and repair scenarios. The 115 W power dissipation figure assumes proper heatsinking — derate according to the thermal resistance in the datasheet.

Switching performance and gate charge

A maximum gate charge of 29 nC at 4.5 V means the IRL8114PBF switches efficiently even with modest gate-drive current. This low Qg reduces driver losses and allows higher switching frequencies in synchronous rectifiers and buck converters. The 0.0027 µF input capacitance (Ciss) is consistent with a device optimized for low Rds(on) rather than ultra-fast switching — expect clean waveforms up to several hundred kHz with appropriate layout.

Lifecycle and sourcing

The IRL8114PBF carries an Active lifecycle status — no last-time-buy or end-of-life notice is in effect. It remains a current-production part suitable for new designs and BOM freeze.

Frequently asked questions

Is IRL8114PBF compatible with 5V gate drive?

Yes. The maximum gate threshold voltage is 2.25 V at 250 µA, so a 5 V logic output fully enhances the channel. The part is fully specified at 10 V for lowest Rds(on), but it conducts well below that.