The Infineon IRL8114PBF is an N-channel HEXFET® power MOSFET in a TO220AB through-hole package, rated for 30 V drain-source and 90 A continuous drain current. The device is built for power conversion, motor drives, battery management, and DC-DC converter stages where a TO220AB package is preferred for heatsinking and board-level serviceability.
Gate drive and threshold — why the 2.25 V Vgs(th) matters
With a maximum gate threshold voltage of 2.25 V at 250 µA, the IRL8114PBF is a logic-level MOSFET. It can be driven directly from a microcontroller output without a separate gate-driver stage, simplifying the BOM in low-voltage control circuits.
Thermal and package considerations
The TO220AB package allows direct mounting to a heatsink with a single screw, and the through-hole leads suit wave-solder assembly or hand-rework in prototype and repair scenarios. The 115 W power dissipation figure assumes proper heatsinking — derate according to the thermal resistance in the datasheet.
Switching performance and gate charge
A maximum gate charge of 29 nC at 4.5 V means the IRL8114PBF switches efficiently even with modest gate-drive current. This low Qg reduces driver losses and allows higher switching frequencies in synchronous rectifiers and buck converters. The 0.0027 µF input capacitance (Ciss) is consistent with a device optimized for low Rds(on) rather than ultra-fast switching — expect clean waveforms up to several hundred kHz with appropriate layout.