80 V N-channel in a 2x2 PQFN — what the scorch mark tells you
The IRL80HS120 is an 80 V, 12.5 A N-channel MOSFET in a 6-PQFN (2x2) package. It switches on with a 4.5 V or 10 V gate drive and carries a 32 mOhm max on-resistance at 7.5 A and 10 V. Junction temperature range is -55°C to 175°C.
7 nC gate charge — fast edge without a heavy driver
Gate charge is 7 nC at 4.5 V and 540 pF input capacitance at 25 V drain-source. The gate driver does not need to source much current to switch the FET quickly. The ±20 V Vgs max gives headroom if the gate drive rings on a long PCB trace.
Package and mounting — footprint reality
The 6-PQFN (2x2) package is a 2 mm by 2 mm body with an exposed pad. It is a surface-mount part; the pad needs a solder-paste stencil aperture that matches the recommended land pattern. The drain is on the pad — the PCB copper pour under it carries the drain current and heat.
Lifecycle and compliance — active, no LTB clock ticking
ROHS3 compliant. No last-time-buy notice or obsolescence risk on the horizon.