Infineon HEXFET® N-Channel MOSFET, 30 V drain-source, 150 A continuous drain, 3.8 mOhm Rds(on) at 10 V, TO-220AB through-hole package, -55 to 175 °C junction temperature.
| Parameter | Value |
|---|---|
| Series | HEXFET® |
| FET type | N-Channel |
| Mounting type | Through Hole |
| Drain to source voltage | 30 V |
| Drive voltage (Max rds on, min rds on) | 4.5V, 10V |
| Current - continuous drain (Id) @ 25°C | 150A (Tc) |
| Power dissipation | 140W (Tc) |
| Operating temperature | -55°C ~ 175°C (TJ) |
| Package | Tube |
| Vgs | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Case | TO-220-3 |
| Vgs(th) (Max) @ id | 2.3V @ 250µA |
| Rds on (Max) @ id, vgs | 3.8mOhm @ 38A, 10V |
| Gate charge (Qg) (Max) @ vgs | 47 nC @ 4.5 V |
| Input capacitance (Ciss) (Max) @ vds | 4170 pF @ 15 V |
The IRL7833PBF: Gate threshold voltage maxes at 2.3 V at 250 µA, and the drive voltage range for rated Rds(on) is 4.5 V to 10 V. That means a logic output can turn this FET fully on without a dedicated gate-driver IC.
It is RoHS3 compliant (lead-free). For new designs, this part is a safe choice against obsolescence risk.
No official successor is listed in the lifecycle record. If obsolescence occurs, the part would be sourced through the surplus and broker channel. For new designs, the active status means no replacement planning is needed today.
Yes — the 30 V drain-source rating covers typical Li-ion battery stacks up to 6S (25.2 V full charge), and the 150 A continuous drain handles high-discharge packs. The logic-level gate threshold allows direct drive from a battery-management IC or microcontroller without a separate gate driver.
Through-hole TO-220AB package with three leads. Standard hole pattern for a TO-220 heatsink; the tab is the drain terminal. Mount with a thermal pad or grease and a clip or screw for the 140 W dissipation capability.