209 A continuous drain — what it takes to deliver that current
The IRL7486MTRPBF is an N-channel MOSFET from Infineon's HEXFET and StrongIRFET series, rated for 40 V drain-to-source and a continuous drain current of 209 A at 25 °C case temperature.
DirectFET Isometric ME — layout and thermal planning
The DirectFET Isometric ME package is a surface-mount can with a large solderable drain pad on the bottom and source tabs on the sides. The thermal path runs through the drain pad directly to the board — the PCB copper area under the part sets the junction-to-ambient thermal resistance, so the layout needs a solid copper pour and enough vias to the inner or backside planes to keep the junction below 150 °C under full load. Gate drive voltage can be 4.5 V or 10 V, with the lower threshold of 2.5 V at 150 µA drain current. The 111 nC total gate charge at 4.5 V means the gate driver must source enough peak current to switch the 6904 pF input capacitance cleanly at the target frequency — a 2 A driver is comfortable up to about 100 kHz before the switching losses start climbing.